NTE2164 NTE ELECTRONICS, NTE2164 Datasheet - Page 5

• Manufacturer Part Number: NTE2164
• Description: IC, DRAM, 64KBIT, DIP-16
• Manufacturer: NTE ELECTRONICS

Specifications of NTE2164

• Memory Type: DRAM - MOS
• Access Time: 150ns
• Page Size: 64Kbit
• Memory Case Style: DIP
• No. Of Pins: 16
• Operating Temperature Range: 0°C To +70°C
• Mounting Type: Through Hole
• Memory Size: 64Kbit

AC Characteristics (Cont’d): (T
Note 9. V
Note10. An initial pause of 200 s is required after power–up followed by a minimum of eight initialization
Note 11. The time parameters specified here are valid for a transition time of t
Note12. The specification for t
Note17. t
Note20. t
Note21. t
Write Command Setup Time
Write Command Hold Time
Write Command Hold Time referenced to RAS
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data in Setup Time
Data in Hold Time
Data in Hold Time referenced to RAS
CAS to WE Delay
RAS to WE Delay
RMW Cycle RAS Pulse Width
RMW Cycle CAS Pulse Width
Page Mode Cycle Time
Page Mode Read–Write Cycle Time
Page Mode CAS Precharge Time
are measured between V
cycles prior to normal operation.
to indicate cycle time at which proper operation over full temperature range
(0 C
sheet as electrical characteristics only: If t
and the Data Out will remain open circuit (high impedance) throughout the entire cycle; if
t
will contain data read from the selected cell. If neither of the above sets of conditions is satis-
fied, the condition of the Data Out (at access time) is indeterminate.
edge of WE in delayed write of read–modify–write cycles.
RCD
WCS
CWD
DS
IH
and t
and V
, t
+ t
CWD
T
t
CAH
CWD
DH
A
IL
Parameter
, and t
are referenced to the leading edge of CAS in early write cycles, and to the leading
are reference levels to measure timing of input signals. Also, transition times
+70 C) is assured.
(Min) and t
t
AR
RWC
Min, t
RC
are not restrictive operating parameters. They are included in the data
RCD
unless otherwise specified)
RWD
(Min), t
IH
A
= 0 to +70 C, V
and V
+ t
DH
t
RWD
RWC
IL
.
t
(Min) the cycle is a read–write cycle and the Data Out
DHR
(Min), and page–mode cycle time (t
Symbol
t
Min, t
t
t
t
t
t
t
t
PRWC
t
t
t
WCS
WCH
WCR
CWD
RWD
RRW
CRW
WCS
t
CWL
RWL
t
t
DHR
t
t
WP
DS
DH
PC
CP
CC
RCD
= 5V 10%, Note 9, Note 10, Note 11
Note 20
Note 17
Note 21
Note 21
Note 17
Note 20
Note 20
Note 12
t
WCS
Test Conditions
+ t
WCH
(Min), the cycle is an early write cycle
t
WCR
T
= 5ns for the input signals
Min.
Min
120
120
150
200
125
145
190
45
45
45
45
45
75
60
0
0
PC
Typ
) are only used
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max Unit
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns