HN58C256AP85E Renesas Electronics America, HN58C256AP85E Datasheet - Page 18

• Manufacturer Part Number: HN58C256AP85E
• Description: IC, EEPROM, 256KBIT, 1MHZ, DIP-28
• Manufacturer: Renesas Electronics America

Specifications of HN58C256AP85E

• Memory Size: 256Kbit
• Memory Configuration: 32K X 8
• Ic Interface Type: Parallel
• Access Time: 85ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: DIP
• No. Of Pins: 28
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HN58C256A Series, HN58C257A Series
Write/Erase Endurance and Data Retention Time
The endurance is 10
(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-
programmed less than 10
Data Protection
To prevent this phenomenon, this device has a noise cancelation function that cuts noise if its width is 20 ns
or less.
1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation
Rev.6.00, Oct. 26.2006, page 18 of 24
During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to
programming mode by mistake. Be careful not to allow noise of a width of more than 20 ns on the
control pins.
5
cycles in case of the page programming and 10
4
cycles.
WE
CE
OE
20 ns max
4
cycles in case of the byte programming
V
0 V
V
0 V
IH
IH