HN58C256AP85E Renesas Electronics America, HN58C256AP85E Datasheet - Page 25

• Manufacturer Part Number: HN58C256AP85E
• Description: IC, EEPROM, 256KBIT, 1MHZ, DIP-28
• Manufacturer: Renesas Electronics America

Specifications of HN58C256AP85E

• Memory Size: 256Kbit
• Memory Configuration: 32K X 8
• Ic Interface Type: Parallel
• Access Time: 85ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: DIP
• No. Of Pins: 28
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Revision History
Rev. Date
0.0
1.0
2.0
3.0
4.0
5.00
6.00
Jun. 19. 1995
May. 17. 1996
Feb. 27. 1997
May. 20. 1997
Oct. 24. 1997
Nov. 17. 2003
Oct. 26, 2006
Contents of Modification
Page


4
4
5
6
4
16
16
8

2
20-23
2
Description
Initial issue
Change of format
Absolute Maximun Ratings
Recommended DC Operating Conditions
DC Characteristics
AC Characteristics
Recommended DC Operating Conditions
Functional Description
Functional Description
Timing Waveforms
Change format issued by Renesas Technology Corp.
Ordering Information
Package Dimensions
Ordering Information
Addition of note 4
V
V
Input pulse levels: 0 V to 3.0 V to 0.4 V to 3.0 V
Data Polling Timing Waveform
Toggle bit Waveform
V
Data Protection 3: Addition of note
Data Protection 3: Change of Description
Read Timing Waveform: Correct error
Addition of HN58C256AFP-85E, HN58C256AFP-10E, HN58C256AT-85E,
HN58C256AT-10E, HN58C257AT-85E, HN58C257AT-10E
FP-28D to FP-28D, FP-28DV
TFP-28DB to TFP-28DB, TFP-28DBV
TFP-32DA to TFP-32DA, TFP-32DAV
Addition of HN58C256AP-85E, HN58C256AP-10E
IH
OH
IL
Addition of note 1
Addition of note 4
(max): 0.6 V to 0.8 V
(min): 3.0 V to 2.2 V
(min): V
HN58C256A/HN58C257A Series Data Sheet
CC
× 0.8 V to 2.4 V