NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 22
NANDO1GW3B2CN6
Manufacturer Part Number
NANDO1GW3B2CN6
Description
IC, FLASH, 1GB, 25µS, TSOP-48
Manufacturer
NUMONYX
Datasheet
1.NANDO1GW3B2CN6.pdf
(60 pages)
Specifications of NANDO1GW3B2CN6
Memory Type
FLASH
Memory Size
1GB
Access Time
25µS
Supply Voltage Range
2.7V TO 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C TO +85°C
Voltage, Vcc
3.3V
Memory Configuration
128M X 8
Rohs Compliant
Yes
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Device operations
Figure 7.
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RB
I/O
R
Row Add 1,2,3
code
Cmd
00h
Random data output during sequential data output
5 Add cycles
Address
inputs
(Read Busy time)
Col Add 1,2
tBLBH1
code
30h
Cmd
Main area
Busy
Data output
Spare
area
code
Cmd
05h
Col Add 1,2
2Add cycles
Address
inputs
NAND01G-B2B, NAND02G-B2C
code
E0h
Cmd
Main area
Data output
Spare
area
ai08658
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