NANDO1GW3B2CN6 NUMONYX, NANDO1GW3B2CN6 Datasheet - Page 48

• Manufacturer Part Number: NANDO1GW3B2CN6
• Description: IC, FLASH, 1GB, 25µS, TSOP-48
• Manufacturer: NUMONYX

Specifications of NANDO1GW3B2CN6

• Memory Type: FLASH
• Memory Size: 1GB
• Access Time: 25µS
• Supply Voltage Range: 2.7V TO 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: -40°C TO +85°C
• Voltage, Vcc: 3.3V
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes

DC and AC parameters
Figure 23. Read status register AC waveforms
Figure 24. Read electronic signature AC waveforms
1. Refer to
48/60
contained in byte 3 and 4.
I/O
CL
AL
CL
I/O
W
W
E
R
E
R
Table 14
for the values of the manufacturer and device codes, and to
Read Electronic
90h
Command
Signature
tCLHWH
(Data Setup time)
tELWH
tDVWH
1st Cycle
Address
tALLRL1
00h
(Read ES Access time)
70h
tRLQV
tWLWH
(Data Hold time)
tWHDX
tWHCLL
tWHEH
tDZRL
Byte1
Man.
code
tWHRL
tCLLRL
tRLQV
Device
code
tELQV
Byte2
Table 15
NAND01G-B2B, NAND02G-B2C
Byte3
00h
Status Register
and
tEHQZ
tRHQZ
Output
Table 16
see Note.1
Byte4
for the information
ai13108
ai08667