AM29F040B-90JI Spansion Inc., AM29F040B-90JI Datasheet - Page 31

IC, FLASH, 4MBIT, 90NS, LCC-32

AM29F040B-90JI

Manufacturer Part Number
AM29F040B-90JI
Description
IC, FLASH, 4MBIT, 90NS, LCC-32
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29F040B-90JI

Memory Type
Flash
Memory Size
4Mbit
Memory Configuration
512K X 8
Access Time
90ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
PLCC
No. Of Pins
32
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
November 11, 2009 21445E8
Input Voltage with respect to V
V
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
for further information on command definitions.
Current
C
C
C
OUT
IN2
IN
Parameter
A
= 25°C, f = 1.0 MHz.
CC
Input Capacitance
Output Capacitance
Control Pin Capacitance
. Test conditions: V
SS
3)
on all I/O pins
Parameter Description
(Note
Typ
3.6
1
8
7
CC
1)
= 4.5 V (4.75 V for -55), 1,000,000 cycles.
CC
D A T A
(Note
= 5.0 V, one pin at a time.
Max
10.8
300
64
8
2)
Am29F040B
Unit
sec
sec
sec
µs
S H E E T
Excludes 00h programming prior to erasure (Note
Excludes system-level overhead (Note
V
V
V
OUT
IN
IN
°
= 0
= 0
C, 5.0 V V
= 0
Test Setup
CC
, 1,000,000 cycles. Additionally,
Comments
–100 mA
–1.0 V
Typ
8.5
7.5
Min
6
5)
Max
7.5
12
9
V
+100 mA
CC
Max
4)
+ 1.0 V
Unit
pF
pF
pF
29
4

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