AS6C4008-55SIN ALLIANCE MEMORY, AS6C4008-55SIN Datasheet - Page 5
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AS6C4008-55SIN
Manufacturer Part Number
AS6C4008-55SIN
Description
SRAM, 4MB, 2.7V-5.5V, 512KX8, SOP32
Manufacturer
ALLIANCE MEMORY
Datasheet
1.AS6C4008-55PCN.pdf
(15 pages)
Specifications of AS6C4008-55SIN
Memory Size
4Mbit
Access Time
55ns
Supply Voltage Range
2.7V To 5.5V
Memory Case Style
SOP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating
RoHS Compliant
Memory Configuration
512K X 8
Rohs Compliant
Yes
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AS6C4008-55SIN
Manufacturer:
ALLIANCE
Quantity:
5 530
Company:
Part Number:
AS6C4008-55SIN
Manufacturer:
ALLIANCE
Quantity:
6 250
Part Number:
AS6C4008-55SIN
Manufacturer:
ALLIANC
Quantity:
20 000
Company:
Part Number:
AS6C4008-55SINTR
Manufacturer:
ALLIANCE
Quantity:
5 530
Company:
Part Number:
AS6C4008-55SINTR
Manufacturer:
ALLIANCE
Quantity:
6 250
Notes:
1. V
2. V
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
CAPACITANCE
n I
Input/Output Capacitance
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
n I
n I
Input and Output Timing Reference Levels
O
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
(2) WRITE CYCLE
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
*These parameters are guaranteed by device characterization, but not production tested.
OCTOBER 2007
Rev. 1.1
u
Typical valued are measured at V
p
p
p
p t
IH
IL
t u
t u
t u
10 October 2007, v 1.1
(min) = V
(max) = V
t u
C
P
R
u
a
s i
L
s l
p
o
e
a
a
e
a
c
PARAMETER
d
SS
L
PARAMETER
PARAMETER
n
a t i
CC
e
d
- 3.0V for pulse width less than 10ns.
v
n
+ 3.0V for pulse width less than 10ns.
F
e
c
l l a
s l
e
i T
(T
m
A
e
= 25 , f
s
512K X 8 BIT LOW POWER CMOS SRAM
CC
℃
= V
= 1.0MHz)
CC
(TYP.) and T
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WC
AW
CW
AS
WP
WR
DW
DH
OW
WHZ
RC
AA
ACE
OE
CLZ
OLZ
CHZ
OHZ
OH
SYM.
SYM.
Alliance Memory Inc.,
SYMBOL
*
*
*
*
*
*
C
C
A
I/O
IN
= 25 ?
MIN.
MIN.
0
3
1.5V
C
2 .
n
L
s
MAX.
MAX.
V
= 30pF + 1TTL, I
o t
MIN.
V
CC
-
-
AS6C4008-55
- 0.2V
MIN.
MIN.
AS6C4008-55
55
10
10
55
50
50
45
25
5
0
0
0
5
-
-
-
-
-
-
OH
MAX.
MAX.
55
55
30
20
20
20
/I
-
-
-
-
-
-
-
-
-
-
-
-
-
OL
MAX
= -1mA/2mA
6
8
MIN.
MIN.
Page 5 of 15
AS6C4008
MAX.
MAX.
UNIT
pF
pF
UNIT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns