BS62LV1027TIP55 BSI (BRILLIANCE SEMICONDUCTOR), BS62LV1027TIP55 Datasheet - Page 5

SRAM 1M, 128KX8, 2.4-5.5V, TSOP32

BS62LV1027TIP55

Manufacturer Part Number
BS62LV1027TIP55
Description
SRAM 1M, 128KX8, 2.4-5.5V, TSOP32
Manufacturer
BSI (BRILLIANCE SEMICONDUCTOR)
Datasheet

Specifications of BS62LV1027TIP55

Memory Size
1Mbit
Access Time
55ns
Supply Voltage Range
2.4V To 5.5V
Memory Case Style
TSOP
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Operating Temperature Max
85°C
Operating
RoHS Compliant
n SWITCHING WAVEFORMS (READ CYCLE)
R0201-BS62LV1027
READ CYCLE 1
READ CYCLE 2
READ CYCLE 3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
5. Transition is measured ± 500mV from steady state with C
The parameter is guaranteed but not 100% tested.
ADDRESS
D
IL
OUT
.
CE1
CE2
D
ADDRESS
OE
CE1
CE2
D
OUT
OUT
(1,2,4)
(1,3,4)
(1, 4)
IL
and CE2= V
t
t
OH
CLZ
(5)
t
t
L
t
t
CLZ1
CLZ2
ACS1
ACS2
= 5pF.
IH
t
.
AA
(5)
(5)
5
t
t
ACS1
ACS2
t
AA
t
OLZ
t
RC
t
t
OE
RC
t
CHZ1
t
t
CHZ1
CHZ2
BS62LV1027
, t
t
t
OHZ
OH
CHZ2
(1,5)
(2,5)
t
OH
(5)
(5)
Revision
May.
2006
2.3

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