BS62LV1027TIP55 BSI (BRILLIANCE SEMICONDUCTOR), BS62LV1027TIP55 Datasheet - Page 6

• Manufacturer Part Number: BS62LV1027TIP55
• Description: SRAM 1M, 128KX8, 2.4-5.5V, TSOP32
• Manufacturer: BSI (BRILLIANCE SEMICONDUCTOR)

Specifications of BS62LV1027TIP55

• Memory Size: 1Mbit
• Access Time: 55ns
• Supply Voltage Range: 2.4V To 5.5V
• Memory Case Style: TSOP
• No. Of Pins: 32
• Operating Temperature Range: -40°C To +85°C
• Operating Temperature Max: 85°C
• Operating: RoHS Compliant

n AC ELECTRICAL CHARACTERISTICS (T
n SWITCHING WAVEFORMS (WRITE CYCLE)
R0201-BS62LV1027
WRITE CYCLE
WRITE CYCLE 1
PARAMETER
JEDEC
NAME
t
t
t
t
t
t
t
t
t
t
t
t
E1LWH
E2LAX
WLWH
WHAX
DVWH
WHDX
WHQX
AVWL
AVWH
WLQZ
GHQZ
AVAX
ADDRESS
OE
CE1
CE2
WE
D
D
OUT
IN
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WR1
WR2
WHZ
OHZ
WC
CW
DW
OW
AW
WP
DH
AS
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
DESCRIPTION
t
t
AS
OHZ
A
= -40
(4,10)
O
C to +85
(5)
(5)
6
(CE1, WE)
t
(CE2)
AW
O
C)
t
t
t
CW
CW
WP
t
WC
CYCLE TIME : 55ns
MIN.
(11)
(11)
55
55
55
30
25
(2)
--
--
0
0
0
0
5
(V
CC
= 3.0~5.5V)
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
t
DW
MAX.
25
25
--
--
--
--
--
--
--
--
--
--
t
t
WR1
WR2
t
DH
CYCLE TIME : 70ns
MIN.
70
70
70
35
30
(3)
(3)
0
0
0
--
0
--
5
(V
BS62LV1027
CC
= 2.7~5.5V)
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
30
30
--
--
--
--
--
--
--
--
--
--
Revision
May.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
2006
2.3