DSPIC30F2012T-30I/ML Microchip Technology, DSPIC30F2012T-30I/ML Datasheet - Page 159
![IC,DSP,16-BIT,CMOS,LLCC,28PIN,PLASTIC](/photos/6/81/68120/150-28-qfn_sml.jpg)
DSPIC30F2012T-30I/ML
Manufacturer Part Number
DSPIC30F2012T-30I/ML
Description
IC,DSP,16-BIT,CMOS,LLCC,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F2011-20ISO.pdf
(210 pages)
3.DSPIC30F2011-20ISO.pdf
(14 pages)
4.DSPIC30F2011-20ISO.pdf
(6 pages)
5.DSPIC30F2011-20ISO.pdf
(18 pages)
6.DSPIC30F2011-20IP.pdf
(26 pages)
Specifications of DSPIC30F2012T-30I/ML
Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2012T-30I/ML
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F2011-20ISO PDF datasheet #2
- DSPIC30F2011-20ISO PDF datasheet #3
- DSPIC30F2011-20ISO PDF datasheet #4
- DSPIC30F2011-20ISO PDF datasheet #5
- DSPIC30F2011-20IP PDF datasheet #6
- Current page: 159 of 210
- Download datasheet (3Mb)
TABLE 20-12: DC CHARACTERISTICS: PROGRAM AND EEPROM
© 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D137
D138
Note 1:
Param
No.
2:
E
V
T
T
I
E
V
V
V
T
T
I
I
Symbol
DEW
PEW
EB
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
DEW
RETD
EB
PEW
RETD
D
DRW
P
PR
PEW
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
I
I
DD
DD
DD
DD
DD
DD
DD
During Programming
During Programming
During Programming
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
dsPIC30F2011/2012/3012/3013
(2)
(2)
Standard Operating Conditions: 2.5V to 5.5V
(unless otherwise stated)
Operating temperature
100K
V
V
10K
Min
0.8
3.0
0.8
4.5
40
40
—
—
—
MIN
MIN
Typ
100K
100
100
1M
10
10
10
—
—
—
—
2
2
(1)
Max
5.5
2.6
5.5
5.5
5.5
2.6
—
—
30
—
30
30
—
-40°C ≤ T
-40°C ≤ T
Units
Year
Year
E/W
E/W
mA
mA
mA
ms
ms
V
V
V
V
-40° C ≤ T
Using EECON to Read/Write
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
-40° C ≤ T
V
voltage
RTSP
Provided no other specifications
are violated
Row Erase
Bulk Erase
A
A
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
= Minimum operating
= Minimum operating
A
A
Conditions
≤ +85°C
≤ +85°C
DS70139G-page 159
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