DSPIC30F4012T-30I/SO Microchip Technology, DSPIC30F4012T-30I/SO Datasheet - Page 185
DSPIC30F4012T-30I/SO
Manufacturer Part Number
DSPIC30F4012T-30I/SO
Description
IC,DSP,16-BIT,CMOS,SOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F4012-30ISO.pdf
(238 pages)
3.DSPIC30F4012-30ISO.pdf
(18 pages)
4.DSPIC30F4012-30ISO.pdf
(6 pages)
5.DSPIC30F4012-30ISO.pdf
(16 pages)
6.DSPIC30F4012-30ISO.pdf
(22 pages)
Specifications of DSPIC30F4012T-30I/SO
Rohs Compliant
YES
Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
48KB (16K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
DSPIC30F4012T30IS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F4012T-30I/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- DSPIC30F2011-20ISO PDF datasheet
- DSPIC30F4012-30ISO PDF datasheet #2
- DSPIC30F4012-30ISO PDF datasheet #3
- DSPIC30F4012-30ISO PDF datasheet #4
- DSPIC30F4012-30ISO PDF datasheet #5
- DSPIC30F4012-30ISO PDF datasheet #6
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TABLE 24-10: ELECTRICAL CHARACTERISTICS: BOR
TABLE 24-11: DC CHARACTERISTICS: PROGRAM AND EEPROM
© 2010 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D130
D131
D132
D133
D134
D135
D137
D138
Note 1:
DC CHARACTERISTICS
BO10
BO15
Note 1:
Param
Param
No.
No.
2:
2:
3:
E
V
T
T
I
E
V
V
V
T
T
I
I
Symbol
DEW
PEW
EB
RETD
RETD
DEW
EB
PEW
D
DRW
P
PR
PEW
V
V
Symbol
Data in “Typ” column is at 5V, 25°C unless otherwise stated.
These parameters are characterized but not tested in manufacturing.
Data in “Typ” column is at 5V, 25°C unless otherwise stated. Parameters are for design guidance only and
are not tested.
These parameters are characterized but not tested in manufacturing.
‘11’ values not in usable operating range.
BOR
BHYS
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
I
Program Flash Memory
Cell Endurance
V
V
V
Erase/Write Cycle Time
Characteristic Retention
I
I
DD
DD
DD
DD
DD
DD
DD
BOR Voltage on
V
High-to-Low
During Programming
During Programming
During Programming
DD
for Read/Write
for Read
for Bulk Erase
for Erase/Write
Characteristic
Transition
Characteristic
(2)
(2)
(2)
BORV = 11
BORV = 10
BORV = 01
BORV = 00
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
Standard Operating Conditions: 2.5V to 5.5V (unless otherwise stated)
Operating temperature
100K
V
V
Min
10K
0.8
4.5
3.0
0.8
40
40
—
—
—
MIN
MIN
Typ
100K
100
100
(3)
1M
10
10
10
—
—
—
—
2
2
(1)
4.58
Min
2.6
4.1
—
—
Max
5.5
2.6
5.5
5.5
5.5
2.6
30
30
30
—
—
—
—
dsPIC30F4011/4012
-40°C ≤ T
-40°C ≤ T
Typ
-40°C ≤ T
-40°C ≤ T
—
—
—
—
Units
5
Year Provided no other specifications are
Year Provided no other specifications are
E/W -40° C ≤ T
E/W -40° C ≤ T
mA
mA
mA
ms
ms
(1)
V
V
V
V
A
A
Max
2.71
4.73
Using EECON to read/write,
V
violated
Row Erase
V
violated
Row Erase
Bulk Erase
RTSP
RTSP
4.4
A
A
—
—
≤ +85°C for Industrial
≤ +125°C for Extended
MIN
MIN
≤ +85°C for Industrial
≤ +125°C for Extended
= Minimum operating voltage
= Minimum operating voltage
Units
mV
A
A
V
V
V
V
≤ +85°C
≤ +85°C
Conditions
Not in operating range
DS70135G-page 185
Conditions
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