LM3875TF National Semiconductor, LM3875TF Datasheet - Page 12

Audio Power Amplifier IC

LM3875TF

Manufacturer Part Number
LM3875TF
Description
Audio Power Amplifier IC
Manufacturer
National Semiconductor
Datasheet

Specifications of LM3875TF

Amplifier Case Style
TO-220
No. Of Pins
11
Peak Reflow Compatible (260 C)
No
Termination Type
Through Hole
Supply Voltage Max
84V
Leaded Process Compatible
No
Mounting Type
Through Hole
Operational Class
Class-AB
Audio Amplifier Output Configuration
1-Channel Mono
Output Power (typ)
56x1@8OhmW
Audio Amplifier Function
Speaker
Input Offset Voltage
10@±35VmV
Input Bias Current
1uA
Total Harmonic Distortion
0.06@8Ohm@40W%
Single Supply Voltage (typ)
24/28V
Dual Supply Voltage (typ)
±12/±15/±18/±24/±28V
Power Supply Requirement
Single/Dual
Power Dissipation
125W
Unity Gain Bandwidth Product (typ)
8MHz
Rail/rail I/o Type
No
Power Supply Rejection Ratio
120dB
Single Supply Voltage (min)
20V
Single Supply Voltage (max)
84V
Dual Supply Voltage (min)
±10V
Dual Supply Voltage (max)
±42V
Operating Temp Range
-20C to 85C
Operating Temperature Classification
Commercial
Mounting
Through Hole
Pin Count
11 +Tab
Package Type
TO-220
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LM3875TF
Manufacturer:
ST
0
Part Number:
LM3875TF/NOPB
Manufacturer:
ABB
Quantity:
12
www.national.com
Typical Performance Characteristics
Application Information
GENERAL FEATURES
Under-Voltage Protection: Upon system power-up the
under-voltage Protection Circuitry allows the power supplies
and their corresponding caps to come up close to their full
values before turning on the LM3875 such that no DC output
spikes occur. Upon turn-off, the output of the LM3875 is
brought to ground before the power supplies such that no
transients occur at power-down.
Over-Voltage Protection: The LM3875 contains overvolt-
age protection circuitry that limits the output current to ap-
proximately 4Apeak while also providing voltage clamping,
though not through internal clamping diodes. The clamping
effect is quite the same, however, the output transistors are
designed to work alternately by sinking large current spikes.
SPiKe Protection: The LM3875 is protected from instanta-
neous peak-temperature stressing by the power transistor
array. The Safe Operating Area graph in the Typical Perfor-
mance Characteristics section shows the area of device
operation where the SPiKe Protection Circuitry is not en-
abled. The waveform to the right of the SOA graph exempli-
fies how the dynamic protection will cause waveform distor-
tion when enabled.
Common-Mode Rejection
Pulse Response
Ratio
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12
(Continued)
Thermal Protection: The LM3875 has a sophisticated ther-
mal protection scheme to prevent long-term thermal stress
to the device. When the temperature on the die reaches
165˚C, the LM3875 shuts down. It starts operating again
when the die temperature drops to about 155˚C, but if the
temperature again begins to rise, shutdown will occur again
at 165˚C. Therefore the device is allowed to heat up to a
relatively high temperature if the fault condition is temporary,
but a sustained fault will cause the device to cycle in a
Schmitt Trigger fashion between the thermal shutdown tem-
perature limits of 165˚C and 155˚C. This greatly reduces the
stress imposed on the IC by thermal cycling, which in turn
improves its reliability under sustained fault conditions.
Since the die temperature is directly dependent upon the
heat sink, the heat sink should be chosen as discussed in
the Thermal Considerations section, such that thermal
shutdown will not be reached during normal operation. Using
the best heat sink possible within the cost and space con-
straints of the system will improve the long-term reliability of
any power semiconductor device.
Large Signal Response
Frequency Response
Open Loop
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