PIC10F200-E/P Microchip Technology, PIC10F200-E/P Datasheet - Page 65

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PIC10F200-E/P

Manufacturer Part Number
PIC10F200-E/P
Description
IC,MICROCONTROLLER,8-BIT,PIC CPU,CMOS,DIP,8PIN,PLASTIC
Manufacturer
Microchip Technology
Series
PIC® 10Fr

Specifications of PIC10F200-E/P

Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
4MHz
Peripherals
POR, WDT
Number Of I /o
3
Program Memory Size
384B (256 x 12)
Program Memory Type
FLASH
Ram Size
16 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With
AC162059 - HEADER INTRFC MPLAB ICD2 8/14PINAC164037 - MODULE SKT 6L PROMATE II SOT23
Eeprom Size
-
Data Converters
-
Connectivity
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC10F200-E/P
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
12.0
Absolute Maximum Ratings
Ambient temperature under bias.......................................................................................................... -40°C to +125°C
Storage temperature ............................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to V
Voltage on all other pins with respect to V
Total power dissipation
Max. current out of V
Max. current into V
Input clamp current, I
Output clamp current, I
Max. output current sunk by any I/O pin .............................................................................................................. 25 mA
Max. output current sourced by any I/O pin ......................................................................................................... 25 mA
Max. output current sourced by I/O port .............................................................................................................. 75 mA
Max. output current sunk by I/O port ................................................................................................................... 75 mA
© 2007 Microchip Technology Inc.
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: P
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
ELECTRICAL CHARACTERISTICS
DD
with respect to V
DD
SS
IK
pin ..................................................................................................................................... 80 mA
(1)
OK
(V
pin .................................................................................................................................. 80 mA
.................................................................................................................................. 800 mW
I
(V
< 0 or V
O
< 0 or V
SS
I
SS
............................................................................................................... 0 to +6.5V
> V
(†)
..........................................................................................................0 to +13.5V
O
DD
> V
SS
)...................................................................................................................±20 mA
DD
............................................................................... -0.3V to (V
) ...........................................................................................................±20 mA
DIS
PIC10F200/202/204/206
= V
DD
x {I
DD
– ∑ I
OH
} + ∑ {(V
DD
– V
OH
) x I
OH
DS41239D-page 63
} + ∑(V
DD
+ 0.3V)
OL
x I
OL
)

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