PIC18F2420-E/SP Microchip Technology, PIC18F2420-E/SP Datasheet - Page 339
![no-image](/images/manufacturer_photos/0/4/439/microchip_technology_sml.jpg)
PIC18F2420-E/SP
Manufacturer Part Number
PIC18F2420-E/SP
Description
28 PIN, 16 KB STD FLASH, 3804 RAM, 25 I/O, PB FREE,
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC18F2420-IML.pdf
(412 pages)
2.PIC18F2420-IML.pdf
(16 pages)
3.PIC18F2420-IML.pdf
(8 pages)
4.PIC18F2420-IML.pdf
(6 pages)
5.PIC18F2420-IML.pdf
(8 pages)
6.PIC18F2420-IML.pdf
(4 pages)
Specifications of PIC18F2420-E/SP
Rohs Compliant
YES
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DVA18XP280 - DEVICE ADAPTER 18F2220 PDIP 28LD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC18F2420-E/SP
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- PIC18F2420-IML PDF datasheet
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- PIC18F2420-IML PDF datasheet #3
- PIC18F2420-IML PDF datasheet #4
- PIC18F2420-IML PDF datasheet #5
- PIC18F2420-IML PDF datasheet #6
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TABLE 26-1:
© 2008 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
T
I
DDP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
(1)
PIC18F2420/2520/4420/4520
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
4.5
40
40
—
—
—
—
—
MIN
MIN
MIN
1
100K
Typ†
10M
100
1M
10
10
—
—
—
—
—
—
—
4
4
2
Max
5.5
5.5
5.5
5.5
5.5
—
—
—
—
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
ms
ms
V
V
V
V
V
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, +25°C
Using ICSP™ port, +25°C
V
voltage
V
V
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V, +25°C
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39631E-page 337
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