PIC18F4685-E/PT Microchip Technology, PIC18F4685-E/PT Datasheet - Page 102
![96KB, Flash, 3328bytes-RAM, 36I/O, 8-bit Family,nanoWatt,ECAN 44 TQFP 10x10x1mm](/photos/6/82/68251/c04-076_pt_sml.jpg)
PIC18F4685-E/PT
Manufacturer Part Number
PIC18F4685-E/PT
Description
96KB, Flash, 3328bytes-RAM, 36I/O, 8-bit Family,nanoWatt,ECAN 44 TQFP 10x10x1mm
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PCM18XT0.pdf
(484 pages)
2.PIC18F2221-ISO.pdf
(46 pages)
3.PIC18F2682-ISP.pdf
(6 pages)
4.PIC18F2682-ISP.pdf
(4 pages)
Specifications of PIC18F4685-E/PT
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
36
Program Memory Size
96KB (48K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
3.25K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
44-TQFP, 44-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
I3-DB18F4680 - BOARD DAUGHTER ICEPIC3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F4685-E/PT
Manufacturer:
MICROCHIP
Quantity:
2 000
Company:
Part Number:
PIC18F4685-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
Part Number:
PIC18F4685-E/PT
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- PCM18XT0 PDF datasheet
- PIC18F2221-ISO PDF datasheet #2
- PIC18F2682-ISP PDF datasheet #3
- PIC18F2682-ISP PDF datasheet #4
- Current page: 102 of 484
- Download datasheet (9Mb)
PIC18F2682/2685/4682/4685
6.4
The minimum erase block is 32 words or 64 bytes. Only
through the use of an external programmer, or through
ICSP control, can larger blocks of program memory be
Bulk Erased. Word Erase in the Flash array is not
supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 bytes of program memory
is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased.
TBLPTR<5:0> are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 6-2:
DS39761C-page 102
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
ERASING A FLASH PROGRAM MEMORY ROW
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
6.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
8.
Load Table Pointer register with address of row
being erased.
Set the EECON1 register for the erase operation:
• set EEPGD bit to point to program memory;
• clear the CFGS bit to access program memory;
• set WREN bit to enable writes;
• set FREE bit to enable the erase.
Disable interrupts.
Write 55h to EECON2.
Write 0AAh to EECON2.
Set the WR bit. This will begin the Row Erase
cycle.
The CPU will stall for duration of the erase
(about 2 ms using internal timer).
Re-enable interrupts.
FLASH PROGRAM MEMORY
ERASE SEQUENCE
© 2009 Microchip Technology Inc.
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