SI91841DT-285-E3 Vishay, SI91841DT-285-E3 Datasheet - Page 3

• Manufacturer Part Number: SI91841DT-285-E3
• Description: IC,VOLT REGULATOR,FIXED,+2.85V,CMOS,TSOP,5PIN,PLASTIC
• Manufacturer: Vishay

Specifications of SI91841DT-285-E3

• Rohs Compliant: YES
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 6 V
• Output Voltage: 2.85 V
• Output Type: Fixed
• Dropout Voltage (max): 0.08 V at 50 mA
• Output Current: 300 mA
• Line Regulation: 0.18 % / V
• Load Regulation: 20 mV
• Voltage Regulation Accuracy: 1.5 %
• Maximum Power Dissipation: 0.44 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Minimum Operating Temperature: - 40 C
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Notes
a.
b.
c.
d.
e.
f.
g.
Document Number: 71447
S-50956—Rev. D, 16-May-05
SPECIFICATIONS
Output Noise Voltage
Ripple Rejection
Dynamic Line Regulation
Dynamic Load Regulation
Thermal Shutdown Junction
Temperature
Thermal Hysteresis
Reverse current
Short Circuit Current
Shutdown
Shutdown Supply Current
SD Pin Input Voltage
SD Pin Input Voltage
Auto Discharge Resistance
SD Pin Input Current
SD Hysteresis
V
TIMING WAVEFORMS
OUT
pp
Room = 25_C, Full = −40 to 85_C.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at V
V
Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2% below the output voltage measured with a 1-V
differential, provided that V
Ground current is specified for normal operation as well as “drop-out” operation.
The device’s shutdown pin includes a typical 2-MW internal pull-down resistor connected to ground.
V
OUT
OUT(nom)
Turn-On Time
Parameter
= 3.3 V, while typical values for dropout voltage at V
j
is V
OUT
f
when measured with a 1-V differential to V
IN
does not not drop below 2.0 V.
DV
Symbol
V
DV
DV
HYST(SD)
T
OUT
OUT
T
I
R_DIS
I
CC(off)
IN(SD)
V
V
J(S/D)
HYST
t
O(load)
I
e
O(line)
ON
I
SC
SD
SD
R
N
/DV
IN
IN
0 V
V
FIGURE 1. Timing Diagram for Power-Up
Test Conditions Unless Specified
Test Conditions Unless Specified
V
OUT
0 mA t I
SD
V
I
I
V
OUT
OUT
IN
I
OUT
OUT
NOM
V
OUT
I
T
T
: V
SD
OUT
A
A
Low = Regulator OFF (Falling)
= 1 mA, C
= 1 mA, C
High = Regulator ON (Rising)
= 25_C, V
= 25_C, V
OUT(nom)
= 150 mA
(See Figure 1), I
IN.
t
= 2.6 V, BW = 10 Hz to 100 kHz,
0.95 V
OUT
r
< 2 V are measured at V
/t
: 1 mA to 150 mA, t
V
f
SD
= 2 ms, I
t 150 mA, C
Si91841 Only
t
= 1.5 V, V
NOM
V
ON
V
V
V
V
IN
IN
IN
SD
SD
+ 1 V to V
OUT
IN
IN
SD
= −6.0 V
= 1 mF, C
= 1 mF, C
OUT
= V
= V
= 1.5 V
= 1.5 V
t
r
= 0 V
= 0 V
v 1 ms
OUT(nom)
OUT(nom)
LOAD
= 150 mA
IN
NOISE
OUT(nom)
= 6 V
OUT
OUT
r
/t
= 100 nA
f = 100 kHz
f
f = 10 kHz
f = 1 kHz
= 2 ms
+ 1 V
+ 1 V
= 1.0 mF
= 1.0 mF
OUT
= 0.01 mF
+ 2 V
= 1.8 V.
Temp
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
V
V
IN
NOM
a
a
Min
1.5
b
−40 to 85_C
Vishay Siliconix
Limits
Typ
150
700
100
150
0.1
0.7
30
60
40
30
20
20
20
50
1
OUT
c
w 2 V are measured at
Max
V
0.4
Si91841
1
IN
b
www.vishay.com
mV(rms)
Unit
mV
mV
mA
mV
_C
dB
mA
mA
mA
mS
W
V
V
C
3