AQV414EHA PANASONIC EW, AQV414EHA Datasheet

AQV414EHA

Manufacturer Part Number

AQV414EHA

Description

PHOTOMOS RELAY, 400V, 120mA

Manufacturer

PANASONIC EW

Datasheet

1.AQV410EHA.pdf (4 pages)

Specifications of AQV414EHA

Load Voltage Max

400V

Load Current

120mA

On State Resistance Max

50ohm

Contact Configuration

SPST-NC

Isolation Voltage

5kV

Forward Current If

50mA

Relay Terminals

SMD

Leaded Process Compatible

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AQV414EHA

Manufacturer:

NAIS

Quantity:

5 510

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AQV414EHA

Manufacturer:

NAIS

Quantity:

5 510

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AQV414EHAX

Manufacturer:

Panasonic

Quantity:

12 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AQV414EHAZ

Manufacturer:

Panasonic

Quantity:

12 000

Current page: 1 of 4
Download datasheet (90Kb)

GU-E 1 Form B (AQV414E, AQV41❍EH)

TYPES

*Indicate the peak AC and DC values.

Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the relay.

RATING

1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)

Input

Output

Total power dissipation

I/O isolation voltage

Temperature

limits

dual use

Compliance with RoHS Directive

AC/DC

.346

8.8

(Reinforced)

I/O isolation

1,500 V AC

5,000 V AC

(Standard)

voltage

LED forward current

LED reverse voltage

Peak forwrd current

Power dissipation

Load voltage (peak AC)

Continuous load

current

Peak load current

Power dissipation

Operating

Storage

Item

6.4

.252

3.9

.154

voltage

.346

400 V

350 V

400 V

Load

8.8

60 V

Output rating*

120 mA

550 mA

130 mA

120 mA

current

Load

6.4

.252

Symbol

peak

3.6

.142

opr

out

iso

stg

DIP6-pin

inch

Package

connection

Type of

FEATURES

1. High cost-performance type of

PhotoMOS relay 1 Form B output

2. 60V type couples high capacity

(0.55A) with low on-resistance (typ. 1Ω).

3. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double-

diffused and Selective Doping) method.

4. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

Through hole

Cross section of the normally-closed type of

power MOS

AQV412EH

AQV410EH

AQV414EH

Normally closed DIP6-pin

AQV414E

terminal

AQV414E(A)

1,500 V AC

reinforced insulation

Tube packing style

economic type with

0.12 A

0.13 A

0.15 A

400 V

0.3 A

Source electrode

N –

–40°C to +100°C

AQV412EHA

AQV410EHA

AQV414EHA

–40°C to +85°C

Passivation membrane

AQV414EA

AQV412EH(A) AQV410EH(A) AQV414EH(A)

0.55 A

0.65 A

Gate electrode

0.8 A

1.5 A

60 V

Part No.

500 mW

550 mW

Surface-mount terminal

75 mW

50 mA

5 V

1 A

–40°F to +185°F

Picked from the

–40°F to +212°F

AQV412EHAX

AQV410EHAX

AQV414EHAX

1/2/3-pin side

AQV414EAX

5,000 V AC

Intermediate

insulating

membrane

Drain

electrode

Tape and reel packing style

Gate

oxidation

membrane

0.13 A

0.15 A

0.17 A

350 V

0.4 A

(AQV412EH)

VDE

(Standard type)

Picked from the

AQV412EHAZ

AQV410EHAZ

AQV414EHAZ

4/5/6-pin side

AQV414EAZ

5. High sensitivity and low on-

resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ. 1Ω

(AQV412EH).

6. Low-level off-state leakage current

of max. 1 µA (AQV414E)

7. Reinforced insulation 5,000 V type

also available

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Telephone equipment

• Sensing equipment

0.12 A

0.13 A

0.15 A

400 V

0.3 A

(AQV414E, AQV41❍EH)

GU-E 1 Form B

f = 100 Hz, Duty factor = 0.1%

A connection: Peak AC, DC

B,C connection: DC

A connection: 100 ms (1 shot), V

Non-condensing at low temperatures

1 batch contains:

1 tube contains:

(AQV410EH, 414EH) (AQV410EH, 414EH)

500 pcs.

50 pcs.

Tube

TESTING

Packing quantity

Remarks

VDE

Tape and reel

(Reinforced type)

1,000 pcs.

= DC

Related parts for AQV414EHA

AQV414EHA Summary of contents

Page 1

... Picked from the 1/2/3-pin side 4/5/6-pin side AQV414EAX AQV414EAZ 1 tube contains: 50 pcs. AQV412EHAX AQV412EHAZ 1 batch contains: AQV410EHAX AQV410EHAZ 500 pcs. AQV414EHAX AQV414EHAZ f = 100 Hz, Duty factor = 0.1% 350 V 400 V 0. connection: Peak AC, DC 0.15 A 0.13 A B,C connection: DC 0.17 A 0.15 A 0.4 A 0.3 A ...

Page 2

Electrical characteristics (Ambient temperature: 25°C 77°F) Item LED operate (OFF) current Input LED reverse (ON) current LED dropout voltage On resistance Output Off state leakage current Operate (OFF) time* Reverse (ON) time* Transfer characteristics I/O capacitance Initial I/O isolation ...

Page 3

GU-E 1 Form B (AQV414E, AQV41❍EH) REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics Allowable ambient temperature: –40°C to +85°C –40°F to +185°F Type of connection: A 140 AQV410EH 120 AQV414E(H) 100 –40 –20 ...

Page 4

Current vs. voltage characteristics of output at MOS portion Measured portion: between terminals 4 and 6; Ambient temperature: 25°C 77°F 0.6 0.4 0.2 AQV412EH -1 -0 0.5 1 Voltage, V -0.2 -0.4 -0.6 11. Reverse (ON) time ...

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