CSD01060E Cree Inc, CSD01060E Datasheet - Page 2

• Manufacturer Part Number: CSD01060E
• Description: SCHOTTKY DIODE, 1A, 600V, TO-252
• Manufacturer: Cree Inc

Specifications of CSD01060E

• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.8V
• Forward Surge Current Ifsm Max: 9A
• Operating Temperature Range: -55°C To +175°C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 1.8V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2.2A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Capacitance @ Vr, F: 80pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
R
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Q
V
I
C
θJC
θJA
R
F
C
0.0
CSD01060 Rev. N
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
Figure 1. Forward Characteristics
0.5
T
T
T
T
J
J
J
J
= 25°C
= 50°C
= 100°C
= 150°C
V
F
1.0
Forward Voltage (V)
Parameter
1.5
2.0
2.5
3.0
Typ.
1.6
2.0
3.3
8.5
20
40
80
11
3.5
Max.
Typ.
100
500
1.8
2.4
60
7
50
40
30
20
10
50
40
30
20
10
0
0
Unit
˚C/W
°C/W
Unit
0
nC
μA
pF
0
V
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
F
F
200
J
R
R
R
R
R
R
200
= 1 A T
= 1 A T
= 25°C
= 600 V T
= 600 V T
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
Test Conditions
V
R
J
J
400
J
=25°C
=175°C
400
Reverse Voltage (V)
= 25°C, f = 1 MHz
T
T
T
F
J
J
J
J
J
J
J
=25°C
=150°C
= 1 A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25°C
= 100°C
= 200°C
T
T
T
J
J
J
25 ° C
100 ° C
200 ° C
600
600
800
800
Note
1000
1000