BYT53F-TAP Vishay, BYT53F-TAP Datasheet
BYT53F-TAP
Specifications of BYT53F-TAP
Related parts for BYT53F-TAP
BYT53F-TAP Summary of contents
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... A R FAV V = 100 1 FAV V = 150 1 FAV V = 200 1 FAV V = 300 1 FAV V = 400 1 FAV Test condition Part BYT53A BYT53B BYT53C BYT53D BYT53F BYT53G BYT53. Vishay Semiconductors Package SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Symbol Value Unit RRM 100 V R RRM 150 V R RRM ...
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... BYT53. Vishay Semiconductors Parameter Average forward current mm, T Junction and storage temperature range Non repetitive reverse I (BR)R avalanche energy Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient mm board with spacing 25 mm Electrical Characteristics °C, unless otherwise specified amb ...
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... Figure 5. Max. Reverse Power Dissipation vs. Junction 0.1 150 175 16337 Figure 6. Diode Capacitance vs. Reverse Voltage 3.6 (0.140)max. ISO Method E 26(1.014) min. 4.0 (0.156) max. BYT53. Vishay Semiconductors RRM P -Limit R @100 % -Limit R @ 100 125 150 175 - Junction Temperature ( ° Temperature MHz ...
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... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...