BYT53F-TAP Vishay, BYT53F-TAP Datasheet - Page 2

• Manufacturer Part Number: BYT53F-TAP
• Description: AVALANCHE DIODE, 1.9A, 300V, SOD-57
• Manufacturer: Vishay

Specifications of BYT53F-TAP

• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Current If(av): 1.9A
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 50A
• Diode Type: Fast Recovery
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 300 V
• Forward Voltage Drop: 1.1 V at 1 A
• Recovery Time: 50 ns
• Forward Continuous Current: 1.9 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-57
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYT53.
Vishay Semiconductors
Maximum Thermal Resistance
T
Electrical Characteristics
T
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
2
Average forward current
Junction and storage
temperature range
Non repetitive reverse
avalanche energy
Junction ambient
Forward voltage
Reverse current
Reverse recovery time
amb
amb
94 9552
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Figure 1. Max. Thermal Resistance vs. Lead Length
120
100
80
60
40
20
0
0
Parameter
Parameter
Parameter
5
l - Lead Length ( mm )
10
15
T
l = 10 mm, T
I
l = 10 mm, T
on PC board with spacing
25 mm
I
I
V
V
I
20
l
L
(BR)R
F
F
F
= constant
R
R
= 1 A
= 1 A, T
= 0.5 A, I
= V
= V
= 1 A
25
RRM
RRM
l
Test condition
Test condition
Test condition
j
, T
= 175 °C
R
30
L
L
= 1 A, i
j
= 25 °C
= constant
= 150 °C
R
= 0.25 A
Part
16333
Part
Part
0.001
0.01
0.1
10
1
Figure 2. Forward Current vs. Forward Voltage
0
Symbol
T
j
V
V
I
I
t
R
R
rr
= 175 °C
F
F
0.5
T
Symbol
Symbol
V
j
R
R
F
I
= T
E
FAV
thJA
thJA
- Forward Voltage ( V )
1
R
T
Min
stg
j
= 25 ° C
1.5
- 55 to + 175
2
Typ.
Value
Value
100
1.9
20
45
2.5
Document Number 86030
Rev. 1.8, 14-Apr-05
Max
200
3
1.1
0.9
50
5
K/W
K/W
Unit
Unit
mJ
°C
A
Unit
µA
µA
ns
V
V