HSCH-5531 Avago Technologies US Inc., HSCH-5531 Datasheet
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HSCH-5531
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HSCH-5531 Summary of contents
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... HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors Data Sheet Description These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passiva- tion layer provides immunity from contaminants which could otherwise lead to IR drift ...
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... BR 5512 Medium 4 5531 Low Test Conditions = 10 µ Note: 1. Standard Hi-Rel program available on HSCH-5531. Others are available upon request. Typical Detector Characteristics Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Tangential Sensitivity TSS γ Voltage Sensitivity Video Resistance R V Low Barrier (Zero Bias) ...
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... FORWARD VOLTAGE (V) Figure 2. Typical forward characteristics for low barrier beam lead diodes. HSCH-5531. 3 7.5 7.0 0.1 pF 6.5 0.15 pF 6.0 0.25 pF 5.5 5.0 0 9.375 FREQUENCY (GHz) Figure 3. Typical noise figure vs. frequency. ...
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... Typical Parameters, continued Figure 4. Typical Admittance Characteristics with 1 GHz 10 2 Figure 6. Typical Admittance Characteristics with Self Bias. HSCH-5512. 26 GHz Figure 5. Typical Admittance Characteristics with Figure 7. Typical Admittance Characteristics with External Bias µA 50 µA 20 150 µ GHz 2 20 µA 50 µA 150 µA ...
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... Models for Each Beam Lead Schottky Diode HSCH -5531 1 mA Self Bias 0.03 pF 0 HSCH-5512 Self Bias 0. 1.0 mA Self Bias Part Number R (Ω) R (Ω HSCH-5512 5.0 393 267 0. 1.5 mA Self Bias C (pF) R (Ω) R (Ω) C (pF 0.11 5.2 232 5 3 ...
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... Models for Each Beam Lead Schottky Diode, continued HSCH -5531 External Bias 0.03 pF 0 µA DC Bias Part Numbers R (Ω) j HSCH-5531 1400 HSCH-5512 External Bias 0. µA DC Bias Part Numbers R R (Ω HSCH-5512 2.8 1240 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © ...