2MBI200SB-120-50 FUJI ELECTRIC, 2MBI200SB-120-50 Datasheet - Page 3

• Manufacturer Part Number: 2MBI200SB-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 200A, M235
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI200SB-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 1.5kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI200SB-120
5000
1000
1000
500
100
160
120
500
100
50
80
40
50
0
1
1
0
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 25°C
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
ton
t r
Switching time vs. Collector current (typ.)
toff
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
t f
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
100
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Gate resistance : Rg [ Ω ]
1 0
10
200
300
Eon
toff
Eoff
t r
Er r
ton
t f
100
100
3 3
1000
500
100
450
400
350
300
250
200
150
100
5 0
60
40
20
50
0
0
0
0
0
+VGE=15V, -VGE 15V, Rg 4.7Ω, Tj 125°C
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 125°C
toff
t on
t r
t f
200
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area
Collector - Emitter voltage : VCE [ V ]
Vcc=600V, VGE=±15V, Rg=4.7Ω
100
100
400
Collector current : Ic [ A ]
Collector current : Ic [ A ]
600
200
800
200
1000
300
Eon(125°C)
Eoff(125°C)
Err(125°C)
Err(125°C)
Eon(25°C)
Eoff(25°C)
IGBT Modules
1200
300
1400
400