2MBI300U4N-120-50 FUJI ELECTRIC, 2MBI300U4N-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI300U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 300A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI300U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 1.385kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
60
50
40
30
20
10
1000
1000
0
100
100
0.1
10
10
0.1
Vcc=600V, VGE=±15V, RG=2.0Ω, Tj=25
0
Vcc=600V, Ic=300A, VGE=±15V,
Vcc=600V, Ic=300A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
1.0
ton
1.0
200
10.0
10.0
toff
400
tf
Tj=25
Eoff
Eon
Err
ton
toff
tr
tr
tf
o
o
C
C
o
C
100.0
100.0
600
60
50
40
30
20
10
800
600
400
200
10000
0
1000
+VGE=15V, -VGE <= 15V, RG >= 2.0Ω,
0
100
0
10
0
Vcc=600V, VGE=±15V, RG=2.0Ω, Tj=125
0
MS5F6509
Switching loss vs. Collector current (typ.)
100
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=2.0Ω
Reverse bias safe operating area (max.)
Collector-Emitter voltage : VCE [ V ]
Stray inductance <= 100nH
400
Collector current : Ic [ A ]
200
Collector current : Ic [ A ]
200
300
800
400
400
Eon(25
1200
Tj <= 125
tr
11
H04-004-03a
Eoff(125
Eoff(25
Err(125
Eon(125
Err(25
500
ton
toff
tf
o
C)
o
C
14
o
o
C
C)
o
o
C)
1600
o
C)
o
600
C)
C)
600
a