2MBI300UC-120-50 FUJI ELECTRIC, 2MBI300UC-120-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI300UC-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 300A, M235
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI300UC-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 1.47kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2MBI300UC-120
Characteristics (Representative)
100.0
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
10.0
1.0
0.1
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
VGE=0V, f= 1MHz, Tj= 25°C
1
VGE=20V 15V
1
VGE=15V (typ.) / chip
10
Tj= 25°C / chip
2
2
Tj=25°C
3
12V
20
Cies
Cres
Coes
Tj=125°C
3
4
10V
8V
30
4
5
2
2
800
700
600
500
400
300
200
100
10
0
8
6
4
2
0
Collector-Emitter voltage vs. Gate-Emitter voltage
0
5
0
Collector current vs. Collector-Emitter voltage
300
Vcc=600V , Ic=300A , Tj= 25°C
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
1
Dynamic Gate charge (typ.)
10
Gate charge : Qg [ nC ]
600
Tj= 125°C / chip
VGE=20V 15V
Tj=25°C / chip
2
900
15
3
VCE
1200
VGE
20
Ic=600A
Ic=300A
Ic=150A
4
1500
12V
IGBT Modules
10V
8V
1800
5
25