6MBI35S-120-50 FUJI ELECTRIC, 6MBI35S-120-50 Datasheet - Page 3

• Manufacturer Part Number: 6MBI35S-120-50
• Description: IGBT, 6 PACK MOD, 1200V, 35A, M623
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI35S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 35A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 240W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6MBI35S-120
1000
5000
1000
500
100
500
100
50
50
25
20
15
10
5
0
10
10
0
toff
ton
tr
tf
toff
ton
tr
tf
Switching loss vs. Gate resistance (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=35A,V
Switching time vs. Collector current (typ.)
Vcc=600V,V
Vcc=600V,Ic=35A,V
Gate resistance : Rg [
Gate resistance : Rg [
20
Collector current : Ic [ A ]
GE=
±15V, Rg=33 ,Tj=25
50
50
GE=
GE=
±15V,Tj=125
±15V, Tj=25
100
100
40
o
]
]
C
o
o
C
C
Eon
Eoff
Err
500
500
60
1000
500
100
100
50
10
80
60
40
20
8
6
4
2
0
0
0
0
0
toff
ton
200
tr
tf
Switching time vs. Collector current (typ.)
+VGE=15V, -VGE<15V, Rg>33 ,Tj<125
Switching loss vs. Collector current (typ.)
Vcc=600V,V
Reverse bias safe operating area
Vcc=600V,V
Collector - Emitter voltage : VCE [ V ]
400
20
Collector current : Ic [ A ]
20
Collector current : Ic [ A ]
GE=
±15V, Rg=33 ,Tj=125
GE=
600
=
±15V, Rg=33
=
800
40
40
IGBT Modules
=
1000
o
C
o
C
Eoff(125
Eoff(25o)C
Err(125
Err(25
Eon(25
Eon(125
1200
o
C)
o
o
o
C)
C)
C)
o
C)
1400
60
60