6MBI75U2A-060-50 FUJI ELECTRIC, 6MBI75U2A-060-50 Datasheet - Page 3

• Manufacturer Part Number: 6MBI75U2A-060-50
• Description: IGBT, 6 PACK MOD, 600V, 75A, M636
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI75U2A-060-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.15V
• Power Dissipation Max: 255W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
Characteristics (Representative)
175
150
125
100
175
150
125
100
10.00
75
50
25
75
50
25
1.00
0.10
0.01
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
1
VGE=20V 15V 12V
10
VGE=15V / chip
Tj= 25°C / chip
2
2
Cres
Coes
Tj=25°C
3
20
Cies
3
4
Tj=125°C
10V
8V
30
5
4
500
400
300
200
100
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
175
150
125
100
10
Collector current vs. Collector-Emitter voltage (typ.)
0
75
50
25
8
6
4
2
0
0
0
5
0
50
Vcc=300V, Ic=75A, Tj= 25°C
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
1
10
100
Tj= 125°C / chip
Gate charge : Qg [ nC ]
Tj=25°C / chip
VGE
150
2
6MBI75U2A-060
15
VGE=20V 15V
200
VCE
3
250
20
Ic=150A
Ic= 75A
Ic= 37.5A
4
300
25
20
15
10
5
0
12V
10V
8V
25
5