7MBR100U2B-060-50 FUJI ELECTRIC, 7MBR100U2B-060-50 Datasheet - Page 6

• Manufacturer Part Number: 7MBR100U2B-060-50
• Description: IGBT, 7 PACK MOD, 600V, 100A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR100U2B-060-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 378W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
10.00
1.00
0.10
0.01
120
100
120
100
80
60
40
20
80
60
40
20
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
1
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
10
VGE=20V 15V 12V
VGE=15V / chip
Tj= 25°C / chip
Tj=25°C
2
[ Brake ]
[ Brake ]
[ Brake ]
Cres
Cies
Coes
2
3
20
Tj=125°C
3
4
8V
10V
30
5
4
500
400
300
200
100
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
120
100
10
Collector current vs. Collector-Emitter voltage (typ.)
80
60
40
20
8
6
4
2
0
0
0
5
0
0
Vcc=300V, Ic=50A, Tj= 25°C
Dynamic Gate charge (typ.)
50
Gate - Emitter voltage : VGE [ V ]
1
Collector-Emitter voltage : VCE [V]
10
Tj= 125°C / chip
Gate charge : Qg [ nC ]
Tj=25°C / chip
VGE
100
[ Brake ]
2
[ Brake ]
[ Brake ]
VGE=20V 15V
VCE
15
150
7MBR100U2B060
3
200
20
12V
Ic=100A
Ic= 50A
Ic= 25A
4
250
10V
8V
25
20
15
10
5
0
25
5