7MBR100U4B-120-50 FUJI ELECTRIC, 7MBR100U4B-120-50 Datasheet - Page 13

• Manufacturer Part Number: 7MBR100U4B-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 100A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR100U4B-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.35V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10.0
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
1.0
0.1
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
1
1
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
Tj=25°C
10
VGE=15V / chip
Tj= 25°C / chip
2
2
[ Brake ]
[ Brake ]
[ Brake ]
12V
3
3
Tj=125°C
20
Cies
4
4
Cres
Coes
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
10
80
70
60
50
40
30
20
10
0
8
6
4
2
0
0
5
0
0
MS6M0856
Vcc=600V， Ic=50A，Tj= 25°C
Dynamic Gate charge (typ.)
Collector-Emitter voltage : VCE [V]
1
Gate-Emitter voltage : VGE [V]
10
50
Tj= 125°C / chip
Tj=25°C / chip
Gate charge : Qg [nC]
VGE=20V 15V
[ Brake ]
2
[ Brake ]
[ Brake ]
15
100
3
VGE
VCE
150
20
Ic=70A
Ic=35A
Ic=17.5A
4
12V
H04-004-03a
13
10V
8V
15
200
25
5