7MBR50UA-120-50 FUJI ELECTRIC, 7MBR50UA-120-50 Datasheet - Page 3

• Manufacturer Part Number: 7MBR50UA-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 50A, M711
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR50UA-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 205W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
Characteristics (Representative)
100
100
10.0
75
50
25
75
50
25
1.0
0.1
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
1
1
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
VGE=0V, f= 1MHz, Tj= 25°C
VGE=20V
10
VGE=15V / chip
Tj= 25°C / chip
Tj=25°C
2
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
15V
3
3
12V
Tj=125°C
20
Cies
Cres
Coes
4
4
10V
8V
30
5
5
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
100
10
Collector current vs. Collector-Emitter voltage (typ.)
75
50
25
8
6
4
2
0
0
5
0
0
Vcc=600V, Ic=50A, Tj= 25°C
Dynamic Gate charge (typ.)
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
1
10
50
Tj= 125°C / chip
Gate charge : Qg [ nC ]
Tj=25°C / chip
[ Inverter ]
VGE=20V 15V
2
[ Inverter ]
[ Inverter ]
100
15
7MBR50UA120
VGE
3
VCE
150
20
4
Ic=70A
Ic=35A
Ic=17.5A
10V
8V
12V
200
25
5