GA100XCP12-227 GeneSiC Semiconductor, GA100XCP12-227 Datasheet - Page 2

• Manufacturer Part Number: GA100XCP12-227
• Description: IGBT SIC DIODE COPACK, 1200V, 100A, SOT-227
• Manufacturer: GeneSiC Semiconductor

Specifications of GA100XCP12-227

• Transistor Type: IGBT
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 1200V
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 3
• Package / Case: 3-SOT-227
• Product: IGBT Silicon Modules
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

January 2011
Electrical Characteristics
IGBT
Gate Threshold Voltage
Collector-Emitter Leakage Current
Gate-Leakage Current
Collector-Emitter Threshold Voltage
Collector-Emitter Slope Resistance
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Stray Inductance Module
Module Lead Resistance
Reverse Bias Safe Operating Area
Short Circuit Current
Short Circuit Duration
Rise Time
Fall Time
Turn On Delay Time
Turn Off Delay Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Free-wheeling diode
Forward Voltage
Threshold Voltage at Diode
Peak Reverse Recovery Current
Reverse Recovery Time
Diode peak rate of fall of reverse recovery current
during tb
Figure 1: Typical Output Characteristics at 25
Parameter
o
C
Symbol
RBSOA
V
I
V
R
V
I
R
V
dI
CES,150
R
CES,25
CE(SAT)
C
t
t
I
C
C
CE(TO)
E
E
CE,150
Q
I
GE(th)
d(on)
d(off)
V
GES
CE,25
L
I
t
D(TO)
rrm
t
rr
t
t
mod
sc
sc
oes
res
rr
ies
r
f
on
off
/dt
G
F
Preliminary Datasheet
http://www.genesicsemi.com
T
I
I
C
F
j
=125 ºC, R
= 100 A, V
= 100 A, V
V
V
V
V
V
V
GE
CC
I
-dI
GE
CE
GE
F
GE
= 520 V, I
V
= 100 A, V
= 0 V, V
= 0 V, V
= 0 V, V
V
= 0 V, V
F
T
= V
CC
V
V
/dt = 625 A/ s, T
CC
R
V
j
= 125 ºC, R
GE(0n)
GE
= 700 V, I
GE
gon
g
= 900 V, V
CE
GE
GE
=56 , V
T
= 15 V, T
= 15 V, T
Conditions
, I
c
= R
Figure 2: Typical Output Characteristics at 150
= 0 V, T
= 15 V, T
= 25 (150) ºC
= 15 V, V
T
T
CE
C
T
CE
CE
GE
j
C
j
= 2 mA, T
= 125 ºC
= 25 ºC
j
= 25ºC
goff
GE
= V
= 100 A, V
= V
= 25 V, f = 1 MHz
= 20 V, T
C
= 12 ,
= 0 V, V
CC
CES
= 100 A,
CES
j
g
GE
=1200 V, V
j
j
= 150 ºC
= 56 ,
= 25 ºC (150 ºC )
= 25 ºC
j
GE(0ff)
, T
= 25 ºC(150 ºC)
= ±15 V
, T
j
j
= 125 ºC
j
j
= 150 ºC
= 25 ºC
= 25 ºC
j
= -8 V,
R
= 25 ºC
GE
= 600 V
= 15V
GE
=15 V
GA100XCP12-227
min.
5.4
2.0(2.1)
2.4(3.7)
Values
25.5
4.47
17.7
typ.
400
150
200
124
176
104
560
550
0.5
1.1
tbd
tbd
tbd
tbd
0.8
11
16
60
6
5
o
max.
C
500
6.5
0.5
10
Page 2 of 5
Unit
A/ s
m
m
m
mA
mA
nA
nC
nH
mJ
mJ
nF
nF
nF
ns
ns
ns
ns
ns
A
V
V
V
A
V
V
A
s