GA100XCP12-227 GeneSiC Semiconductor, GA100XCP12-227 Datasheet - Page 3

• Manufacturer Part Number: GA100XCP12-227
• Description: IGBT SIC DIODE COPACK, 1200V, 100A, SOT-227
• Manufacturer: GeneSiC Semiconductor

Specifications of GA100XCP12-227

• Transistor Type: IGBT
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 1200V
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 3
• Package / Case: 3-SOT-227
• Product: IGBT Silicon Modules
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Details

January 2011
Figure 3: Typical Transfer Characteristics
Figure 5: Typical FWD Forward Characteristics
Figure 7: Typical Turn On Energy Losses and Switching Times
Preliminary Datasheet
http://www.genesicsemi.com
Figure 8: Typical Turn Off Energy Losses and Switching Times
Figure 4: Typical Blocking Characteristics
Figure 6: Typical Turn On Gate Charge
GA100XCP12-227
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