SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 10

• Manufacturer Part Number: SI4563DY-T1-GE3
• Description: NPN & PNP MOSFET, SOIC
• Manufacturer: Vishay

Specifications of SI4563DY-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4563DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
10
8
6
4
2
0
0
125
Package Limited
25
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.5
1.2
0.9
0.6
0.3
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
S09-0393-Rev. C, 09-Mar-09
75
Document Number: 73513
100
125
150