SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 11

• Manufacturer Part Number: SI4563DY-T1-GE3
• Description: NPN & PNP MOSFET, SOIC
• Manufacturer: Vishay

Specifications of SI4563DY-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 73513
S09-0393-Rev. C, 09-Mar-09
0.01
0.01
0.1
0.1
2
1
1
www.vishay.com/ppg?73513.
10
10
-4
-4
0.05
0.1
0.05
Duty Cycle = 0.5
0.02
0.02
0.1
Duty Cycle = 0.5
0.2
0.2
0.5
0.5
Single Pulse
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
1
A
= P
Vishay Siliconix
t
2
100
DM
Z
thJA
thJA
t
t
Si4563DY
1
2
(t)
= 120 °C/W
www.vishay.com
1000
10
11