SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 3
![DUAL N/P CHANNEL MOSFET, 20V, 1206](/photos/22/17/221715/4386990_sml.jpg)
SI5515CDC-T1-E3
Manufacturer Part Number
SI5515CDC-T1-E3
Description
DUAL N/P CHANNEL MOSFET, 20V, 1206
Manufacturer
Vishay
Datasheet
1.SI5515CDC-T1-E3.pdf
(12 pages)
Specifications of SI5515CDC-T1-E3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
800mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68747
S10-0548-Rev. B, 08-Mar-10
SPECIFICATIONS T
Parameter
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
J
a
= 25 °C, unless otherwise noted
Symbol
t
t
t
t
V
d(on)
d(off)
d(on)
d(off)
I
Q
SM
I
t
t
t
t
t
t
t
SD
S
rr
a
b
r
f
r
f
rr
I
I
F
F
I
D
I
= - 2.4 A, dI/dt = - 100 A/µs, T
I
= 4.8 A, dI/dt = 100 A/µs, T
D
D
I
≅ - 2.4 A, V
D
≅ - 2.4 A, V
≅ 4.8 A, V
≅ 4.8 A, V
V
V
V
V
I
DD
DD
S
I
DD
DD
S
= - 2.4 A, V
= 4.8 A, V
= - 10 V, R
= - 10 V, R
= 10 V, R
= 10 V, R
T
N-Channel
P-Channel
N-Channel
P-Channel
N-Channel
P-Channel
GEN
GEN
Test Conditions
C
GEN
GEN
= 25 °C
= 4.5 V, R
= - 4.5 V, R
= 8 V, R
= - 8 V, R
GS
L
L
GS
L
L
= 2.1 Ω
= 2.1 Ω
= 4.2 Ω
= 4.2 Ω
= 0 V
= 0 V
g
g
J
g
= 1 Ω
g
J
= 1 Ω
= 25 °C
= 1 Ω
= 25 °C
= 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Vishay Siliconix
Typ.
Si5515CDC
- 0.8
3.5
0.8
11
18
21
10
32
30
25
10
11
21
13
17
3
8
8
6
7
9
6
3
6
5
4
a
www.vishay.com
Max.
- 2.6
- 1.2
- 10
2.6
1.2
18
17
27
32
16
12
14
20
18
48
45
38
20
12
20
17
32
20
7
6
5
Unit
nC
ns
ns
ns
A
V
3