SI5515CDC-T1-E3 Vishay, SI5515CDC-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI5515CDC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay

Specifications of SI5515CDC-T1-E3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 800mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si5515CDC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.075
0.060
0.045
0.030
0.015
0.000
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
4
0
5
4
3
2
1
0
0
0
0
I
D
= 6 A
V
1
4
V
GS
DS
2
Output Characteristics
Q
= 5 V thru 2 V
- Drain-to-Source Voltage (V)
g
I
- Total Gate Charge (nC)
D
V
- Drain Current (A)
Gate Charge
DS
8
2
= 10 V
4
V
V
GS
DS
12
3
= 1.8 V
= 16 V
V
V
V
V
GS
GS
GS
6
GS
16
= 1 V
4
= 1.5 V
= 2.5 V
= 4.5 V
20
5
8
1000
800
600
400
200
1.8
1.5
1.2
0.9
0.6
0
4
3
2
1
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
0.3
4
V
V
DS
GS
Transfer Characteristics
0
T
T
J
C
C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
oss
= 125 °C
25
Capacitance
0.6
T
8
C
V
= 25 °C
GS
S10-0548-Rev. B, 08-Mar-10
C
50
= 2.5 V, I
iss
Document Number: 68747
0.9
12
V
GS
75
D
= 4.5 V, I
= 5.6 A
100
T
C
1.2
16
= - 55 °C
D
125
= 6 A
150
1.5
20