SI4942DY-T1-GE3 Vishay, SI4942DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4942DY-T1-GE3
• Description: DUAL N CH MOSFET
• Manufacturer: Vishay

Specifications of SI4942DY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 17mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
Limited by R
0.01
100
100
0.1
10
10
1
0.1
-2
DS(on)
* V
125
DS
Single Pulse
T
*
> minimum V
A
150
Square Wave Pulse Duration (s)
= 25 °C
V
DS
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
at which R
DS(on)
10
50
40
30
20
10
1
0.001
0
is specified
1 ms
10 ms
0.01
100 ms
1 s
10 s
DC
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
0.1
DM
JM
- T
Time (s)
t
A
1
S09-0704-Rev. D, 27-Apr-09
= P
t
2
1
Document Number: 71887
DM
Z
thJA
thJA
100
t
t
1
2
10
(t)
= 90 °C/W
100
600
600