SI4943BDY-T1-GE3 Vishay, SI4943BDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4943BDY-T1-GE3
• Description: DUAL P CHANNEL MOSFET, -20V, 8.4A
• Manufacturer: Vishay

Specifications of SI4943BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4943BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
0.2
4
Duty Cycle = 0.5
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
3
I
D
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10 -
0.1
2
Limited
Limited by R
Safe Operating Area, Junction-to-Ambient
I
D(on)
* V
125
Single Pulse
DS
T
A
> minimum V
= 25 °C
Square Wave Pulse Duration (s)
150
V
DS
DS(on)
- Drain-to-Source Voltage (V)
BVDSS Limited
10 -
1
*
1
GS
at which R
DS(on)
10
1
I
50
40
30
20
10
DM
0
is specified
10 -
Limited
1 ms
10 ms
100 ms
1 s
10 s
DC
2
10 -
100
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
A
1
Time (s)
= P
S09-0704-Rev. C, 27-Apr-09
t
2
DM
Document Number: 73073
Z
thJA
thJA
100
10
t
t
1
2
(t)
= 80 °C/W
100
600
600