SI4943BDY-T1-GE3 Vishay, SI4943BDY-T1-GE3 Datasheet - Page 5
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SI4943BDY-T1-GE3
Manufacturer Part Number
SI4943BDY-T1-GE3
Description
DUAL P CHANNEL MOSFET, -20V, 8.4A
Manufacturer
Vishay
Datasheet
1.SI4943BDY-T1-E3.pdf
(6 pages)
Specifications of SI4943BDY-T1-GE3
Transistor Polarity
P Channel
Continuous Drain Current Id
-8.4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4943BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73073.
Document Number: 73073
S09-0704-Rev. C, 27-Apr-09
0.01
0.1
2
1
10 -
0.05
0.02
Single Pulse
4
0.2
0.1
Duty Cycle = 0.5
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si4943BDY
www.vishay.com
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