SI4943BDY-T1-GE3 Vishay, SI4943BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4943BDY-T1-GE3
• Description: DUAL P CHANNEL MOSFET, -20V, 8.4A
• Manufacturer: Vishay

Specifications of SI4943BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8.4A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73073.
Document Number: 73073
S09-0704-Rev. C, 27-Apr-09
0.01
0.1
2
1
10 -
0.05
0.02
Single Pulse
4
0.2
0.1
Duty Cycle = 0.5
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si4943BDY
www.vishay.com
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