IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 7
![N CHANNEL MOSFET, 30V, 11A, SOIC](/photos/22/17/221759/3770310_sml.jpg)
IRF7807ZPBF
Manufacturer Part Number
IRF7807ZPBF
Description
N CHANNEL MOSFET, 30V, 11A, SOIC
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet
1.IRF7807ZPBF.pdf
(10 pages)
Specifications of IRF7807ZPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
13.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
18.2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Fall Time
3.1 ns
Gate Charge Qg
7.2 nC
Minimum Operating Temperature
- 55 C
Rise Time
6.2 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0138Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
www.irf.com
+
R
-
D.U.T
Fig 15.
+
-
•
•
•
•
SD
•
•
•
Vgs(th)
Qgs1 Qgs2
Vds
-
G
Fig 16. Gate Charge Waveform
HEXFET
+
V
Qgd
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Qgodr
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
P.W.
SD
= 5V for Logic Level Devices
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Body Diode Forward
Diode Recovery
Current
Vgs
dv/dt
Forward Drop
di/dt
Id
D =
Period
P.W.
V
V
I
SD
GS
DD
=10V
7