IRF840APBF Vishay, IRF840APBF Datasheet

N CHANNEL MOSFET, 500V, 8A, TO-220

IRF840APBF

Manufacturer Part Number
IRF840APBF
Description
N CHANNEL MOSFET, 500V, 8A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRF840APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840APBF

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Document Number: 91065
I
I
I
P
V
dv/dt
T
T
D
D
DM
STG
D
GS
J
@ T
@ T
Drive Requirement
Avalanche Voltage and Current
dv/dt Ruggedness
@T
Full Bridge
Switch Mode Power Supply ( SMPS )
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss Specified (See AN1001)
Haft Bridge
Two Transistor Forward
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-220AB
Max.
125
± 30
8.0
5.1
1.0
5.0
32
0.85Ω
®
Power MOSFET
G
D
S
www.vishay.com
PD- 94829
Units
W/°C
8.0A
V/ns
°C
W
A
V
I
D
1

Related parts for IRF840APBF

IRF840APBF Summary of contents

Page 1

... Full Bridge l Document Number: 91065 SMPS MOSFET HEXFET V Rds(on) max DSS 500V @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 94829 ® Power MOSFET I D 0.85Ω 8. TO-220AB Max. Units 8.0 5 125 W 1.0 W/°C ± 5.0 V/ns °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA D = 4.8A „ 250µ 0V 125° Conditions = 4.8A D „ = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V … DS Max. Units 510 mJ 8 Max. Units 1.0 ––– °C/W 62 Conditions 8.0A „ 8. www.vishay.com 2 ...

Page 3

... 2.5 2.0 1.5 1.0 0.5 = 50V 0.0 -60 -40 -20 8.0 9.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 7.4A 8 10V 100 120 140 160 ° Junction Temperature ( C) J www.vishay.com 100 3 ...

Page 4

... 150 Single Pulse GS 0.1 10 1.1 1 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 40 10000 4 ...

Page 5

... T , Case Temperature ( 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Document Number: 91065 V DS 90% 125 150 ° 10 d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 12c. Maximum Avalanche Energy 600 580 560 540 + 520 0.0 1.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 3.6A 5.1A BOTTOM 8. 100 125 ° J Vs. Drain Current 2.0 3.0 4.0 5.0 6.0 7 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 8.0 6 ...

Page 7

... Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Document Number: 91065 + • • ƒ • - „ - • • • • P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

Page 8

... LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C is rising from DSS TAC Fax: (310) 252-7903 www.vishay.com 11/03 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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