IRF840APBF Vishay, IRF840APBF Datasheet - Page 4
![N CHANNEL MOSFET, 500V, 8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF840APBF
Manufacturer Part Number
IRF840APBF
Description
N CHANNEL MOSFET, 500V, 8A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840APBF
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840APBF
Manufacturer:
INFINEON
Quantity:
21 000
Company:
Part Number:
IRF840APBF
Manufacturer:
VISHAY
Quantity:
4 250
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91065
100000
10000
1000
100
100
0.1
10
10
1
1
0.2
1
V
T = 150 C
V DS , Drain-to-Source Voltage (V)
SD
J
0.5
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
10
Ciss
0.8
Coss
Crss
T = 25 C
J
f = 1 MHZ
100
°
1.1
V
GS
SHORTED
= 0 V
1000
1.4
100
0.1
20
16
12
10
8
4
0
1
10
0
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
7.4 A
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
100
V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
20
DS(on)
10us
100us
1ms
10ms
FOR TEST CIRCUIT
SEE FIGURE
1000
www.vishay.com
30
13
10000
40
4