IRF840APBF Vishay, IRF840APBF Datasheet - Page 3
![N CHANNEL MOSFET, 500V, 8A, TO-220](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF840APBF
Manufacturer Part Number
IRF840APBF
Description
N CHANNEL MOSFET, 500V, 8A, TO-220
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840APBF
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF840APBF
Manufacturer:
INFINEON
Quantity:
21 000
Company:
Part Number:
IRF840APBF
Manufacturer:
VISHAY
Quantity:
4 250
Part Number:
IRF840APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91065
S11-0506-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91065_01
91065_02
Fig. 2 - Typical Output Characteristics, T
10
10
0.1
0.1
Fig. 1 - Typical Output Characteristics, T
10
10
1
1
2
2
0.1
0.1
Top
Bottom
Top
Bottom
V
V
DS
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
GS
GS
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
10
10
C
C
=
=
25 °C
150 °C
4.5 V
This datasheet is subject to change without notice.
4.5 V
C
C
= 150 °C
= 25 °C
10
10
2
2
91065_03
91065_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
0.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
2
- 60 - 40 - 20
4.0
I
V
Fig. 3 - Typical Transfer Characteristics
D
T
GS
= 8.0 A
J
= 150
= 10 V
V
5.0
GS ,
T
°
J ,
IRF840A, SiHF840A
C
Gate-to-Source Voltage (V)
0
Junction Temperature (°C)
T
J
20 40 60 80 100 120 140 160
= 25
6.0
°
C
www.vishay.com/doc?91000
Vishay Siliconix
7.0
20 µs Pulse Width
V
DS
=
50 V
8.0
www.vishay.com
9.0
3