IRF9640PBF Vishay, IRF9640PBF Datasheet

P CHANNEL MOSFET, -200V, 11A TO-220

IRF9640PBF

Manufacturer Part Number
IRF9640PBF
Description
P CHANNEL MOSFET, -200V, 11A TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRF9640PBF

Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-200V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
38 ns
Rise Time
43 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF9640PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9640PBF
Manufacturer:
IR
Quantity:
11 200
Part Number:
IRF9640PBF
Manufacturer:
VISHAY
Quantity:
220
Part Number:
IRF9640PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF9640PBF
Quantity:
9 000
Company:
Part Number:
IRF9640PBF
Quantity:
80 000
Company:
Part Number:
IRF9640PBF
Quantity:
6 474
Company:
Part Number:
IRF9640PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91086
S11-0513-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ - 11 A, dI/dt ≤ 150 A/μs, V
= - 50 V, starting T
(Ω)
TO-220AB
a
D
J
= 25 °C, L = 8.7 mH, R
c
a
a
V
b
GS
DD
= - 10 V
≤ V
G
DS
, T
P-Channel MOSFET
Single
- 200
J
7.1
44
27
≤ 150 °C.
This datasheet is subject to change without notice.
g
C
D
= 25 Ω, I
S
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.50
GS
at - 10 V
6-32 or M3 screw
AS
= - 11 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
TO-220AB
IRF9640PbF
SiHF9640-E3
IRF9640
SiHF9640
C
= 100 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
= 25 °C
SYMBOL
T
dV/dt
J
V
V
E
E
device
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
design,
IRF9640, SiHF9640
- 55 to + 150
LIMIT
- 200
± 20
- 6.8
- 5.0
300
- 11
- 44
700
- 11
125
1.0
1.1
13
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
A
A
V
V
Available
and
1

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IRF9640PBF Summary of contents

Page 1

... The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its D wide acceptance throughout the industry. TO-220AB IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640 = 25 °C, unless otherwise noted) C SYMBOL ° ...

Page 2

... IRF9640, SiHF9640 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Fig Typical Transfer Characteristics C 3.0 2.5 2.0 1.5 1.0 - 4.5 V 0.5 20 µs Pulse Width T = 150 °C C 0.0 91086_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF9640, SiHF9640 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage (V) ...

Page 4

... IRF9640, SiHF9640 Vishay Siliconix 2400 MHz iss gs 2000 rss oss ds 1600 1200 800 400 Drain-to-Source Voltage ( 91086_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 160 100 Total Gate Charge (nC) 91086_06 G Fig Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 5

... Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms Single Pulse (Thermal Response 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF9640, SiHF9640 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 d(on) r d(off) ...

Page 6

... IRF9640, SiHF9640 Vishay Siliconix D.U 0.01 Ω p Fig. 12a - Unclamped Inductive Test Circuit 91086_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... V for logic level and - 3 V drive device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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