IRF9640PBF Vishay, IRF9640PBF Datasheet - Page 4

• Manufacturer Part Number: IRF9640PBF
• Description: P CHANNEL MOSFET, -200V, 11A TO-220
• Manufacturer: Vishay

Specifications of IRF9640PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 38 ns
• Rise Time: 43 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9640PBF

IRF9640, SiHF9640
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
91086_06
91086_05
2400
2000
1600
1200
800
400
20
16
12
8
4
0
0
10
0
I
0
D
= - 11 A
- V
10
DS ,
Q
V
G
DS
, Total Gate Charge (nC)
Drain-to-Source Voltage (V)
= - 40 V
20
V
DS
= - 100 V
V
C
C
C
GS
iss
rss
oss
30
= C
= 0 V, f = 1 MHz
= C
V
= C
DS
10
gs
gd
ds
= - 160 V
1
+ C
+ C
40
gd
gd
For test circuit
see figure 13
This datasheet is subject to change without notice.
C
C
C
, C
iss
oss
rss
ds
50
Shorted
60
91086_08
91086_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
Fig. 8 - Maximum Safe Operating Area
-1
1
2
5
2
5
2
1
0
0.0
1
2
- V
- V
1.0
DS
150
SD
Operation in this area limited
5
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
°
C
10
T
T
Single Pulse
2.0
C
J
by R
= 150 °C
= 25 °C
2
DS(on)
S11-0513-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91086
5
3.0
25
10
°
C
2
2
4.0
10
10
100
1
V
ms
GS
ms
µs
µs
= 0 V
5
5.0
10
3