IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet

N CH MOSFET, 500V, 20A, TO-220AB

IRFB20N50KPBF

Manufacturer Part Number
IRFB20N50KPBF
Description
N CH MOSFET, 500V, 20A, TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFB20N50KPBF

Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2870pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB20N50KPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB20N50KPBF
Manufacturer:
VISHAY
Quantity:
256
Part Number:
IRFB20N50KPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFB20N50KPBF
Quantity:
1 850
Company:
Part Number:
IRFB20N50KPBF
Quantity:
25 780
Company:
Part Number:
IRFB20N50KPBF
Quantity:
70 000
Document Number: 91101
Benefits
l
l
l
l
Applications
l
l
l
l
l
Avalanche Characteristics
Thermal Resistance
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Symbol
E
I
E
Symbol
R
R
R
D
D
AR
DM
STG
D
GS
J
AS
AR
θJC
θCS
θJA
@ T
@ T
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low R
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency
Lead-Free
@T
Circuits
C
C
C
= 25°C
= 100°C
= 25°C
DS(on)
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
(1.6mm from case )
Parameter
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
500V
IRFB20N50KPbF
DSS
Typ.
Typ.
0.50
–––
–––
–––
–––
–––
-55 to + 150
HEXFET
Max.
280
± 30
300
2.2
6.9
20
12
80
10
R
DS(on)
0.21Ω
®
Power MOSFET
Max.
Max.
0.45
typ.
330
–––
58
20
28
TO-220AB
www.vishay.com
PD - 94984
Units
W/°C
V/ns
°C
W
A
V
N
Units
Units
°C/W
20A
mJ
mJ
I
2/5/04
A
D
1

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IRFB20N50KPBF Summary of contents

Page 1

... E Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Document Number: 91101 IRFB20N50KPbF SMPS MOSFET HEXFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– Typ. ––– ...

Page 2

... Fig. 10 „ 25V DS pF ƒ = 1.0MHz, See Fig 0V 1.0V, ƒ = 1.0MHz 0V 400V, ƒ = 1.0MHz 0V 400V … Conditions MOSFET symbol showing the integral reverse G p-n junction diode 25° 20A „ 25° 20A J F µC di/dt = 100A/µs „ S ≤ (BR)DSS www.vishay.com ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 10V GS - 100 120 140 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 160 3 ...

Page 4

... Single Pulse 0.1 1.0 1.2 1 Fig 8. Maximum Safe Operating Area 21A V = 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE 100 Q , Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED (on) 100µsec 1msec 10msec 10 100 1000 Drain-toSource Voltage (V) www.vishay.com 120 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91101 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit I D TOP 9.4A 17A BOTTOM 20A 50 75 100 125 J Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ .2µF .3µ D.U. 3mA Current Sampling Resistors www.vishay.com 150 DS 6 ...

Page 7

... D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Document Number: 91101 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% Fig 14. For N-Channel HEXFETS + - * V =10V www.vishay.com 7 ...

Page 8

... LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) PAR DAT E CODE 1997 INE C TAC Fax: (310) 252-7903 2/04 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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