IRFB20N50KPBF Vishay, IRFB20N50KPBF Datasheet - Page 4
![N CH MOSFET, 500V, 20A, TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFB20N50KPBF
Manufacturer Part Number
IRFB20N50KPBF
Description
N CH MOSFET, 500V, 20A, TO-220AB
Manufacturer
Vishay
Datasheet
1.IRFB20N50KPBF.pdf
(9 pages)
Specifications of IRFB20N50KPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2870pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFB20N50KPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFB20N50KPBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91101
100000
10000
100.0
1000
10.0
100
1.0
0.1
10
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-toDrain Voltage (V)
0.4
Forward Voltage
T J = 150°C
V GS = 0V,
C iss
SHORTED
C rss
C oss
10
0.6
= C ds + C gd
Ciss
Coss
= C gd
Crss
= C gs + C gd , C ds
T J = 25°C
0.8
f = 1 MHZ
100
V GS = 0V
1.0
1.2
1000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
0
I
Fig 6. Typical Gate Charge Vs.
1
D
Tc = 25°C
Tj = 150°C
Single Pulse
=
21A
Gate-to-Source Voltage
20
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
G
10
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
60
100
V
V
V
DS
DS
DS
= 400V
= 250V
= 100V
80
www.vishay.com
FOR TEST CIRCUIT
SEE FIGURE
1000
100µsec
1msec
10msec
100
13
10000
120
4