SI4425BDY-T1-GE3 Vishay, SI4425BDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4425BDY-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI4425BDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -11.4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -400mV
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72000.
Document Number: 72000
S09-0767-Rev. E, 04-May-09
0.01
0.1
2
1
10
-4
0.05
0.2
0.02
0.1
Duty Cycle = 0.5
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4425BDY
www.vishay.com
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