IRFB17N50LPBF Vishay, IRFB17N50LPBF Datasheet - Page 5

• Manufacturer Part Number: IRFB17N50LPBF
• Description: N CHANNEL MOSFET, 500V, 16A, TO-220
• Manufacturer: Vishay

Specifications of IRFB17N50LPBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFB17N50LPBF

Document Number: 91098
S11-0514-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Maximum Drain Current vs. Case Temperature
20
12
16
8
4
0
0.001
25
0.01
0.1
0.00001
1
D = 0.50
50
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
This datasheet is subject to change without notice.
125
t , Rectangular Pulse Duration (sec)
150
0.001
0.01
IRFB17N50L, SiHFB17N50L
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
V
Notes:
DS
t
r
0.1
P DM
D.U.T.
www.vishay.com/doc?91000
Vishay Siliconix
R
t 1
D
t
d(off)
t 2
t
f
+
-
www.vishay.com
V
DD
1
5