PSMN017-60YS NXP Semiconductors, PSMN017-60YS Datasheet - Page 5

• Manufacturer Part Number: PSMN017-60YS
• Description: MOSFET,N CH,60V,44A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN017-60YS_2
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
-1
-2
1
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
10
Thermal characteristics
δ = 0.5
single shot
-6
0.05
0.02
Parameter
thermal resistance from junction to
mounting base
0.2
0.1
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 1 April 2010
Conditions
see
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET
10
Figure 4
-3
10
-2
PSMN017-60YS
Min
-
10
P
-1
Typ
0.9
t
p
T
t
© NXP B.V. 2010. All rights reserved.
p
(s)
003aae079
δ =
Max
2.03
T
t
p
t
1
Unit
K/W
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