PSMN017-60YS NXP Semiconductors, PSMN017-60YS Datasheet - Page 7

• Manufacturer Part Number: PSMN017-60YS
• Description: MOSFET,N CH,60V,44A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN017-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12.3mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
PSMN017-60YS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(S)
2000
1500
1000
g
C
500
fs
40
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
2
…continued
20
4
Conditions
I
I
V
S
S
DS
30
= 15 A; V
= 10 A; dI
6
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= 30 V
003aae082
V
003aae083
I
GS
D
(A)
(V)
C
C
rss
iss
GS
40
S
8
/dt = -100 A/µs; V
Rev. 02 — 1 April 2010
= 0 V; T
N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET
j
= 25 °C; see
Fig 6.
Fig 8.
R
(mΩ)
DSon
GS
(A)
I
D
50
40
30
20
10
50
40
30
20
10
0
0
= 0 V;
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Figure 17
T
5
j
= 175 ° C
2
PSMN017-60YS
Min
-
-
-
10
Typ
0.8
33.4
38.9
4
15
T
© NXP B.V. 2010. All rights reserved.
V
j
= 25 ° C
GS
003aae085
V
003aae081
GS
Max
1.2
-
-
(V)
(V)
20
6
nC
Unit
V
ns
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